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최연익Yearn-Ik Choi

  • 소속 전자공학과
  • 연구실
  • 이메일 yearnik@ajou.ac.kr
  • 내선번호

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학력

  • 1981.08 한국과학기술원 박사

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대표논문

  • [논문] 최연익, 김해미, 서현석, 윤준호, 조중열, 전력반도체소자에 적용되는 원통형 PN접합의 항복전압의 근사식 및 민감도, 대한전기학회 논문지, Vol.57, No.12, pp. 2234-2237 (12월, 2008)
  • [논문] Min-Koo Han, 최연익, Jae-Keun Oh, Min-Woo Ha, A new junction termination method employing shallow trenches filled with oxide, Electron Device Letters(IEEE), Vol.25, No.01, pp. 16-18 (1월, 2004)
  • [논문] Min-Koo Han, 최연익, Jae-Keun Oh, Soo-Seong Kim, You-Sang Lee, A new Lateral Anode Switched Thyristor(LAST) with current satruation and low turn-off time, IEEE Electron Device Letters, Vol.23, No.7, pp. 413-415 (7월, 2002)
  • [논문] S.K.Cung, J.C.Shin, S.Y.Han, 최연익, An Analytical Model for Minimum Drift Region Length of SOIRESURF Diodes, IEEE Electron Device Letters, Vol.17, No.1, pp. 22-24 (1월, 1996)
  • [논문] 최연익, S.N.Yoon, H.S.Kim, M.K.Han, S.D.Kim, Breakdown voltage enhancement of the PN junction by self-aligned double diffusion process through a tapered SiO_2 implant mask, IEEE Electron Device Letters, Vol.16, No.9, pp. 405-407 (9월, 1995)

연구활동

  • [논문] Sung-Hoon Park, 최연익, Chun-Hyung Cho, Hyungtak Kim, Jae-Gil Lee, Ho-Young Cha, Diode Embedded AlGaN/GaN Heterojunction Field Effect Transistor, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.16, No.2, pp. 215-220 (4월, 2016)
  • [논문] 조중열, 서오권, 서현석, 정의혁, 최연익, 이병곤, Effect of hydrogen in zinc oxide thin-film transistor grown by metal organic chemical vapor deposition, Japanese Journal of Applied Physics, Vol.46, No.4B, pp. 2493-2495 (4월, 2007)
  • [논문] Min-Koo Han, 최연익, In-Hwan Ji, Soo-Seong Kim, Young-Hwan Choi, Experimental study on improving unclamped inductive switching characteristics of the new power metal oxide semiconductor field effect transistor employing deep body contact, Japanese Journal of Applied Physics, Vol.45, No.4B, pp. 3121-3124 (4월, 2006)
  • [논문] Min-Koo Han, 최연익, Byung-Chul Jeon, In-Hwan Ji, Young-Hwan Choi, A new protective circuit to improve short-circuit withstanding capability of a lateral emitter switched thyristor, Japanese Journal of Applied Physics, Vol.45, No.4B, pp. 3317-3320 (4월, 2006)
  • [논문] MIn-Koo Han, 최연익, In-Hwan Ji, Soo-Seong Kim, Young-Hwan Choi, A new emitter switched thyristor(EST) employing trench segmented p-base, Microelectronics Journal, Vol.37, No.3, pp. 231-235 (3월, 2006)
  • [논문] 최연익, 문진우, 정상구, Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor, Solid State Electronics, Vol.49, No.05, pp. 834-837 (5월, 2005)
  • [논문] Min-Koo Han, 최연익, Byung-Chul Jeon, In-Hwan Ji, Soo-Seong Kim, Young-Hwan Choi, A new protection circuit for high voltage current saturation of LEST, Electron Device Letters(IEEE), Vol.26, No.3, pp. 191-193 (3월, 2005)
  • [논문] 한민구, 최연익, 김수성, 하민우, Improvement of the short circuit immunity for the trench IGBT employing the curved p body junction and the wide cell pitch, Physica Scripta, Vol.T114, No.1, pp. 73-76 (12월, 2004)
  • [논문] 한민구, 최연익, 전병철, 지인환, A new protection circuit of emitter switched thyristor for short-circuit withstanding capability, Physica Scripta, Vol.T114, No.1, pp. 117-119 (12월, 2004)
  • [논문] 한민구, 최연익, 오재근, 전병철, Optimization of design parameters on maximum controllable current of the trench gate corrugated base base resistance controlled thyristior, Physica Scripta, Vol.T114, No.1, pp. 142-145 (12월, 2004)
  • [논문] 한민구, 최연익, 김수성, 오재근, 하민우, The novel junction termination method employing shallow trench, Physica Scripta, Vol.T114, No.1, pp. 120-122 (12월, 2004)
  • [논문] 한민구, 최연익, 오재근, 전병철, 하민우, A new conductivity modulated LDMOSFET employing buried p region and p+ drain, Japanese J. Applied Physics, Vol.43, No.10, pp. 6917-6919 (10월, 2004)
  • [논문] Min-Koo Han, 최연익, Byung-Chul Jeon, In-Hwan Ji, Min-Woo Ha, A new voltage between collector and emitter(VCE) sensing scheme for short-circuit withstanding capability of the insulated gate bipolar transistor, Japanese J. Applied Physics, Vol.43, No.4B, pp. 1677-1679 (4월, 2004)
  • [논문] Min-Koo Han, 최연익, Min-Woo Ha, Soo-Seong Kim, Trench insulated gate bipolar transistor for the improved short-circuit capability employing curved junction and wide cell pitch, Japanese J. Applied Physics, Vol.43, No.4B, pp. 1752-1755 (4월, 2004)
  • [논문] Ji-Hoon Hong, 최연익, Optimum design for minimum on-resistance of low voltage trench power MOSFET, Microelectronic Journal, Vol.35, No.02, pp. 287-289 (2월, 2004)
  • [논문] Min-Koo Han, 최연익, Byung-Chul Jeon, Min-Woo Ha, ESD Degradation Analysis of Poly-Si N-type TFTs by Employing a Transmission Line Pulser Test, Journal of the Korean Physical Society, Vol.44, No.1, pp. 172-176 (1월, 2004)
  • [논문] Min-Koo Han, 최연익, Jae-Keun Oh, Min-Woo Ha, A new junction termination method employing shallow trenches filled with oxide, Electron Device Letters(IEEE), Vol.25, No.01, pp. 16-18 (1월, 2004)
  • [논문] 정상구, 최연익, 한상길, An analytic model for breakdown voltage of gated diodes, Microelectronic Engineering, Vol.34, No.5, pp. 525-527 (5월, 2003)
  • [논문] 정상구, 최연익, 최이권, Breakdown voltage and on-resistance of multi-RESURF LDMOS, Microelectronic Engineering, Vol.34, No.5, pp. 683-686 (5월, 2003)
  • [논문] 송세원, 최연익, Breakdown characteristics of a Zener diode with n+p+n-p+ structure, J. of Korean Physical Society, Vol.42, No.2, pp. S765-S767 (2월, 2003)
  • [논문] Min-Koo Han, 최연익, Byung-Chul Jeon, Jae-Keun Oh, Seung-Chul Lee, Influence of Process Parameters on the Maximum Controllable Current of Corrugated BRT, Physica Scripta, Vol.T101, No.1, pp. 223-225 (12월, 2002)
  • [논문] 최연익, Byung-Chul Jeon, Jae-Keun Oh, Min-Koo Han, Seung-Pil Choi, A New Dual-Channel Emitter Switched Thyristior (DC-EST) Employing a Self_aligned Trenched Contact, Physica Scripta, Vol.T101, No.1, pp. 238-242 (12월, 2002)
  • [논문] M.-K. Han, 최연익, J.-K. Oh, S.-C. Lee, A New Vertical Channel LDMOS, Physica Scripta, Vol.T101, No.1, pp. 58-60 (12월, 2002)
  • [논문] 최연익, 김선호, 박일용, 정상구, Analytical model of breakdown voltage and on-resistance for PN diodes with linearly doped epi layer, Physica Scripta, Vol.T101, No.1, pp. 234-237 (11월, 2002)
  • [논문] 정상구, 김형우, 박일용, 최연익, Breakdown voltage and on-resistance of the multi-resurf SOI LDMOSFET with recessed source, Physica Scripta, Vol.T101, No.1, pp. 18-21 (11월, 2002)
  • [논문] 정상구, 김민수, 최연익, Analysis of temperature behavior of the NPT-IGBT's characteristics, Physica Scripta, Vol.T101, No.1, pp. 218-222 (10월, 2002)
  • [논문] Min-Koo Han, 최연익, Jae-Keun Oh, Seung-Chul Lee, Soo-Sung Kim, Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area, Solid-State Electronics, Vol.46, No.10, pp. 1553-1556 (10월, 2002)
  • [논문] Min-Koo Han, 최연익, Jae-Keun Oh, Soo-Seong Kim, You-Sang Lee, A new Lateral Anode Switched Thyristor(LAST) with current satruation and low turn-off time, IEEE Electron Device Letters, Vol.23, No.7, pp. 413-415 (7월, 2002)
  • [논문] 정상구, 김선호, 최연익, 박일용, Enhancement of breakdown voltage for SOI RESURF LDMOS employing a buried air structure, Journal of the Korean Physical Society, Vol.39, No.1, pp. S39-S41 (12월, 2001)
  • [논문] 정상구, 김민수, 최연익, Temperature dependence of the NPT-IGBT's characteristics, Journal of the Korean Physical Society, Vol.39, No.1, pp. S74-S77 (12월, 2001)
  • [논문] Min-Koo Han, 최연익, Byeong-Hoon Lee, Won-Oh Lee, You-Sang Lee, Analysis of dual-gate LIGBT with gradual hole injection, IEEE Trans.on Electron Devices, Vol.48, No.9, pp. 2154-2160 (9월, 2001)
  • [논문] 최연익, 이유상, 한민구, Analytic models for the temperature dependence of the breakdown voltage of 6H- and 4H-SiC rectifiers, J. of Korean Physical Society, Vol.39, No.1, pp. 20-22 (7월, 2001)
  • [논문] 최연익, 모선일, 박일용, 임한조, 정상구, 최진성, 한민구, Numerical analysis on the LDMOS with a double epi-layer and trench electrodes, Microelectronics Journal, Vol.32, No.5-6, pp. 497-502 (5월, 2001)
  • [논문] 최연익, S.-H. Kim, S.-J. Yoo, 정상구, Numerical analysis of SOI LDMOS using a recessed source and a trench drain, Microelectronics Journal, Vol.31, No.11-12, pp. 963-967 (12월, 2000)
  • [논문] 김형우, 최연익, Linearly-graded surface-doped SOI LDMOSFET with recessed source, Microelectronic Engineering, Vol.46, No.1, pp. 547-554 (2월, 2000)
  • [논문] 정상구, 박일용, 최연익, 정용성, Temperature dependent effective ionization coefficient for Si, Microelectronic Engineering, Vol.46, No.1, pp. 535-540 (1월, 2000)
  • [논문] 최연익, 김성룡, 양회윤, A recessed source and trench drain SOI LDMOS for improvimg the ON characteristics, Journal of Korean Physical Society, Vol.35, pp. 825-828 (12월, 1999)
  • [논문] 모선일, 김경구, 김민수, 김상열, 김영태, 원영희, 최연익, In-situ Monitoring of Anodic Oxidation of p-type Si(100) by Electrochemical Impedance Techniques in Nonaqueous and Aqueous Solutions, Bulletin, Vol.20, No.9, pp. 1049-1055 (9월, 1999)
  • [논문] M.K.Han, 최연익, B.H.Lee, D.S.Byeon, D.Y.Kim, J.K.Oh, A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact contact for suppressing snapback and fast switching characteristics, Microelectronics Journal, Vol.30, No.6, pp. 577-581 (6월, 1999)
  • [논문] M.K.Han, 최연익, B.H.Lee, D.S.Byeon, D.Y.Kim, J.H.Chun, The seperated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime, Microelectronics Journal, Vol.30, No.6, pp. 571-575 (6월, 1999)
  • [논문] 최연익, 박일용, Trench cathode TIGBT with improved latch-up characteristics, Physica Scripta, Vol.T79, No.1, pp. 337-340 (4월, 1999)
  • [논문] 최연익, Hoie-Yoon Yang, Sung-Lyong Kim, 정상구, Min-Koo Han, A low on-resistance SOI LDMOS with an elevated internal ring, Physica Scripta, Vol.T79, No.1, pp. 303-306 (4월, 1999)
  • [논문] 최연익, 박일용, Analytic breakdown modeling for GaAs Schottky diodes, Physica Scripta, Vol.T79, No.1, pp. 314-317 (4월, 1999)
  • [논문] Min-Koo Han, 최연익, Byeong-Hoon Lee, Dae-Seok Byeon, The maximum controllable current of emitter switched thyristors employing the segmented p-base, Physica Scripta, Vol.T79, No.1, pp. 294-296 (3월, 1999)
  • [논문] Min-Koo Han, 최연익, Dae-Seok Byeon, Doo-Young Kim, A lateral trench-MOS bipolar-mode FET on silicon-on-insulator, Physica Scripta, Vol.T79, No.1, pp. 307-310 (3월, 1999)
  • [논문] 최연익, B.H. Lee, D.S. Byeon, D.Y. Kim, J.H. Chun, Min-Koo Han, An insulated gate bipolar transistor employing the plugged n+ anode, Microelectronics Reliability, Vol.39, No.1, pp. 29-33 (1월, 1999)
  • [논문] Min-Koo Han, 최연익, Byeong-Hoon Lee, Dae-Seok Byeon, Jung-Hoon Chun, Seong-Dong Kim, Won-Oh Lee, A new gradual hole injection dual-gate LIGBT, IEEE Electron Device Letters, Vol.19, No.12, pp. 490-492 (12월, 1998)
  • [논문] 최연익, Dae-Seok Byeon, Doo-Young Kim, 한민구, A New Base Resistance-Controlled Thyristor Employing a Self-Aligned Corrugated P-Base, IEEE ELECTRON DEVICE LETTERS, Vol.19, No.12, pp. 493-495 (12월, 1998)
  • [논문] 최연익, You-Sang Lee, Byeong-Hoon Lee, Dae-Seok Byeon, Jae-Keun Oh, Seong-Dong Kim, The temperature characteristics of the LDMOS, LIGBT, SINFET and IBT, Journal of the Korean Physical Society, Vol.33, No.11, pp. S187-S191 (11월, 1998)
  • [논문] 최연익, 변대석, 양경, 한민구, Optimum design of the field plate in the cylindrical p+n junction: analytical approach, Solid-State Electronics(Pergamon Press), Vol.42, No.9, pp. 1651-1655 (9월, 1998)
  • [논문] 한민구, 최연익, 박철민, 임무섭, A Comparison of Poly Silicon and Titanium Polycide for FIeld Emission Tip, Japanese Journal of Applied Physics, Vol.37, No.4A, pp. 2021-2023 (4월, 1998)
  • [논문] 한민구, 최연익, 김두영, 김성동, Bipolar FET Hybrid-Mode Operation of Lateral SOI BMFET with Improved Current Gain, Japanese Journal of Applied Physics, Vol.37, No.4A, pp. 1787-1792 (4월, 1998)
  • [논문] 조중열, 최연익, K.L. Wang, Kevin Alt, 김동명, Observation of Resonances by individual energy levels in InGaAs/AlAs triple barrier resonant tunneling diodes, Japanese Journal of Applied Physics, Vol.37, No.3, pp. 1654-1656 (3월, 1998)
  • [논문] 최연익, 변대석, 한민구, The breakdown voltage of negative curvatured p+n diodes using using a SOI layer, Solid State Electronics, Vol.41, No.5, pp. 787-788 (5월, 1997)
  • [논문] 최연익, 김두영, 변대석, 이병훈, 이원오, 한민구, Dual-gate shorted anode SOI lateral insulated gate bipolar transistor suppressing the snap-back, Japanese J. Applied Physics, Vol.36, No.3B, pp. 1663-1666 (3월, 1997)
  • [논문] 최연익, 김재형, 윤종만, 한민구, Comparison of lateral IGBT and lateral emitter switched thyrister qitha partial buried oxide layer, Physica Scripta, Vol.69, No.2, pp. 341-344 (2월, 1997)
  • [논문] 최연익, 김두용, 김성동, 임무섭, 한민구, Effects of drift region doping on current characterics in SOI BMFET, Physica Scripta, Vol.69, No.2, pp. 181-184 (2월, 1997)
  • [논문] 최연익, 정용성, 한승엽, Closed-form analytical expressions for the breakdown voltage of GaAs paralled-plane p+n junction in <100>, <110> and <111> orientations, Solid State Electronics, Vol.39, No.11, pp. 1678-1680 (12월, 1996)
  • [논문] 나종민, 신진철, 최연익, 한승엽, An analytical model of the breakdown voltage and minimum epi layer length for RESURF pn diodes, Solid State Electronics, (8월, 1996)
  • [논문] 최연익, 변대석, 한민구, 6H-SiC 平面狀及圓柱狀pn+結擊穿電壓的分析, Power Electronics, Vol.30, No.3, pp. 91-93 (8월, 1996)
  • [논문] 최연익, 김두용, 윤종만, 한민구, Numerical analysis of a new vertical IGBT structure with reduced JFET effect, Solid State Electronics, Vol.39, No.8, pp. 1179-1183 (8월, 1996)
  • [논문] 최연익, 변대석, 한민구, Analytical solution of the breakdown voltage for 6H-silicon carbide p+n junction(150), Journal of Applied Physics(sci), Vol.79, No.5, pp. 2796-2797 (3월, 1996)
  • [논문] 최연익, 한민구, 윤정민, A new power MOSFET with self-current limiting capability(150), Int. J.of Electronics(SCI), Vol.80, No.2, pp. 131-142 (2월, 1996)
  • [논문] 최연익, C.M.Yun, M.K.Han, A monolithic current limiting power MOSFET, International Journal of Electronics, (2월, 1996)
  • [논문] S.K.Cung, J.C.Shin, S.Y.Han, 최연익, An Analytical Model for Minimum Drift Region Length of SOIRESURF Diodes, IEEE Electron Device Letters, Vol.17, No.1, pp. 22-24 (1월, 1996)
  • [논문] 최연익, S.N.Yoon, H.S.Kim, M.K.Han, S.D.Kim, Breakdown voltage enhancement of the PN junction by self-aligned double diffusion process through a tapered SiO_2 implant mask, IEEE Electron Device Letters, Vol.16, No.9, pp. 405-407 (9월, 1995)
  • [논문] 최연익, I.J.Kim, K.Yang, M.K.Han, An analytic solution for breakdown voltage of cylindricaljunctions including the interface charge, Solid State Electronics, Vol.38, No.5, pp. 1107-1108 (5월, 1995)
  • [논문] 최연익, B.H.Lee, C.M.Yun, D.S.Byeon, M.K.Han, A trench-gate silicon-on-insulator lateral insulated gate Bipolar Transistor with the p^+ cathode well, Japan J.Applied Physics, Vol.34, No.2, pp. 854-859 (2월, 1995)
  • [논문] 최연익, H.S.Kim, M.K.Han, S.D.Kim, Low-loss Schottky rectifier utilizing trenched sidewall as junction-barrier-controlled Schottky contact, Japan J.Applied Physics, Vol.34, No.2, pp. 913-916 (2월, 1995)
  • [논문] 최연익, 김성동, 김일중, 한민구, An Accurate on-Resistance Model for Low Voltage Vclmos Devices, Perganon Press, Vol.38, No.2, pp. 345-349